MT3S111TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF SIGE NPN BIPOLAR TRANSISTOR N
$0.58
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MT3S111TU,LF
$0.58
Product details
The MT3S111TU,LF from Toshiba Semiconductor and Storage represents a breakthrough in RF BJT transistor technology for discrete semiconductor applications. This high-performance bipolar transistor features an innovative emitter ballasting technique that ensures uniform current distribution under high-power conditions. Its optimized geometry reduces parasitic inductance while enhancing thermal dissipation properties. The device demonstrates exceptional third-order intercept point (IP3) performance for demanding linearity requirements. Wireless infrastructure designers utilize this component in macrocell and microcell base station power amplifiers. Satellite payload engineers specify it for transponder signal conditioning and low-noise block converter designs. In automotive applications, it supports advanced driver assistance systems (ADAS) and vehicle infotainment modules. The MT3S111TU,LF also enables breakthrough performance in radio astronomy receivers and quantum communication systems. Its lead-frame design minimizes bond wire inductance for improved high-frequency response. Toshiba Semiconductor and Storage provides complete characterization data including noise figure contours and stability factor plots. The product undergoes stringent quality control measures with full traceability throughout the manufacturing process. For design engineers seeking to push RF performance boundaries, the MT3S111TU,LF offers measurable advantages. Download our application notes on impedance matching techniques or thermal management best practices. Request a personalized consultation to determine how this transistor can optimize your specific circuit design parameters.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
- Gain: 12.5dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: UFM
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