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HN3C10FUTE85LF

Toshiba Semiconductor and Storage
HN3C10FUTE85LF Preview
Toshiba Semiconductor and Storage
RF TRANS 2 NPN 12V 7GHZ US6
$0.56
Available to order
Reference Price (USD)
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$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
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HN3C10FUTE85LF

HN3C10FUTE85LF

$0.56

Product details

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

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