HN1C01FYTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 50V 0.15A SM6
$0.34
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HN1C01FYTE85LF
$0.34
Product details
Introducing the HN1C01FYTE85LF BJT Array by Toshiba Semiconductor and Storage, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The HN1C01FYTE85LF excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The HN1C01FYTE85LF features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The HN1C01FYTE85LF also serves critical functions in industrial control systems. Toshiba Semiconductor and Storage has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the HN1C01FYTE85LF delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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