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HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage
HN1B01FU-Y(L,F,T) Preview
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A US6
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HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)

$0.00

Product details

General specs

  • Product Status: Active
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

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