HN1B01FU-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A US6-PLN
$0.33
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Reference Price (USD)
3,000+
$0.06038
Exquisite packaging
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HN1B01FU-GR,LF
$0.33
Product details
The HN1B01FU-GR,LF from Toshiba Semiconductor and Storage delivers exceptional performance in the Bipolar Junction Transistor (BJT) Arrays segment of Discrete Semiconductor Products. This sophisticated component combines multiple transistors with closely matched parameters for coordinated circuit operation. Engineered for reliability, it offers superior current amplification and thermal characteristics. The HN1B01FU-GR,LF features minimal variation in key parameters across all transistors. Its robust design ensures stable operation in demanding electrical environments. With its low collector-emitter saturation voltage, it maximizes system efficiency. The product demonstrates excellent switching speed for high-performance applications. Industrial automation systems benefit from its precise control capabilities. Telecommunications equipment utilizes its stable amplification characteristics. Power management solutions employ it for efficient energy conversion. The HN1B01FU-GR,LF also finds use in advanced computing applications. Toshiba Semiconductor and Storage has incorporated quality-focused manufacturing processes throughout production. The component's design supports effective heat dissipation in continuous operation. Its construction meets international environmental and safety standards. Engineers appreciate its consistent performance across different production batches. The HN1B01FU-GR,LF offers design flexibility for various electronic system requirements. Its compatibility with automated assembly processes simplifies manufacturing integration. Discover how this BJT Array can enhance your project by contacting our technical sales team today.
General specs
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 200mW, 210mW
- Frequency - Transition: 150MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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