GT30N135SRA,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
D-IGBT TO-247 VCES=1350V IC=30A
$3.88
Available to order
Reference Price (USD)
1+
$3.88000
500+
$3.8412
1000+
$3.8024
1500+
$3.7636
2000+
$3.7248
2500+
$3.686
Exquisite packaging
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GT30N135SRA,S1E
$3.88
Product details
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
- Power - Max: 348 W
- Switching Energy: -, 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 270 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 60A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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