GT30J341,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT TRANS 600V 30A TO3PN
$2.58
Available to order
Reference Price (USD)
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$2.57550
500+
$2.549745
1000+
$2.52399
1500+
$2.498235
2000+
$2.47248
2500+
$2.446725
Exquisite packaging
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GT30J341,Q
$2.58
Product details
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 59 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 800µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 80ns/280ns
- Test Condition: 300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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