GT30J121(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 600V 30A 170W TO3PN
$2.91
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GT30J121(Q)
$2.91
Product details
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
- Power - Max: 170 W
- Switching Energy: 1mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 90ns/300ns
- Test Condition: 300V, 30A, 24Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P(N)
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