DF2B18FU,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TVS DIODE 12VWM 33VC USC
$0.37
Available to order
Reference Price (USD)
3,000+
$0.06510
6,000+
$0.05859
15,000+
$0.05208
30,000+
$0.04883
75,000+
$0.04340
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DF2B18FU,H3F
$0.37
Product details
The DF2B18FU,H3F TVS diode by Toshiba Semiconductor and Storage is a top-tier solution for safeguarding electronic systems against transient voltage events. Designed for high-energy absorption and low clamping voltage, this diode is a reliable choice for industrial, automotive, and telecommunications applications. Its robust construction ensures durability and long-term performance, even in harsh environments. The DF2B18FU,H3F also features minimal power dissipation and excellent thermal characteristics. With its fast response time and high surge capability, this diode is ideal for protecting sensitive components. Upgrade your circuit protection today reach out to us for a customized quote and more information.
General specs
- Product Status: Active
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 12V
- Voltage - Breakdown (Min): 16.2V
- Voltage - Clamping (Max) @ Ipp: 33V
- Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
- Power - Peak Pulse: 80W
- Power Line Protection: No
- Applications: -
- Capacitance @ Frequency: 9pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
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