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CUS551V30,H3F

Toshiba Semiconductor and Storage
CUS551V30,H3F Preview
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 500MA USC
$0.29
Available to order
Reference Price (USD)
3,000+
$0.04600
6,000+
$0.04000
15,000+
$0.03400
30,000+
$0.03200
75,000+
$0.03000
150,000+
$0.02800
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CUS551V30,H3F

CUS551V30,H3F

$0.29

Product details

The CUS551V30,H3F from Toshiba Semiconductor and Storage is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the CUS551V30,H3F offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.

General specs

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)

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