CUS10S30,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A USC
$0.38
Available to order
Reference Price (USD)
3,000+
$0.06400
6,000+
$0.05760
15,000+
$0.05120
30,000+
$0.04800
75,000+
$0.04480
Exquisite packaging
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CUS10S30,H3F
$0.38
Product details
General specs
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: 135pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
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