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CUHS15S30,H3F

Toshiba Semiconductor and Storage
CUHS15S30,H3F Preview
Toshiba Semiconductor and Storage
SBD SINGLE 30V, 1.5A, IN 2 PIN U
$0.40
Available to order
Reference Price (USD)
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$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
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Toshiba Semiconductor and Storage CUHS15S30,H3F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CUHS15S30,H3F

CUHS15S30,H3F

$0.40

Product details

Experience superior rectification performance with the CUHS15S30,H3F single diode from Toshiba Semiconductor and Storage, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The CUHS15S30,H3F performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the CUHS15S30,H3F delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.

General specs

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C

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