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CUHS10F60,H3F

Toshiba Semiconductor and Storage
CUHS10F60,H3F Preview
Toshiba Semiconductor and Storage
SMALL-SIGNAL SCHOTTKY BARRIER DI
$0.46
Available to order
Reference Price (USD)
3,000+
$0.07800
6,000+
$0.07020
15,000+
$0.06240
30,000+
$0.05850
75,000+
$0.05460
Exquisite packaging
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Toshiba Semiconductor and Storage CUHS10F60,H3F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CUHS10F60,H3F

CUHS10F60,H3F

$0.46

Product details

Enhance your circuit designs with the CUHS10F60,H3F single rectifier diode by Toshiba Semiconductor and Storage, engineered for precision and durability. This diode excels in converting AC to DC with minimal power loss, ensuring energy-efficient operation across a wide range of conditions. The CUHS10F60,H3F features optimized junction design for improved heat dissipation and long-term reliability. Its excellent rectification efficiency makes it suitable for high-frequency applications. Typical uses include switch-mode power supplies, LED drivers, and motor control circuits. The diode's robust construction withstands harsh environmental conditions, making it ideal for automotive and industrial applications. Additional benefits include low forward voltage drop and high reverse voltage capability. Explore how the CUHS10F60,H3F can improve your power management solutions by contacting our sales team for more information.

General specs

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 60 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C (Max)

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