CMH04(TE12L,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 1A MFLAT
$0.14
Available to order
Reference Price (USD)
3,000+
$0.12375
Exquisite packaging
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CMH04(TE12L,Q,M)
$0.14
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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