CLS10F40,L3F
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
SS SCHOTTKY BARRIER DIODE, HIGH-
$0.51
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$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
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Product details
Toshiba Semiconductor and Storage's CLS10F40,L3F represents the next generation of single rectifier diodes, combining cutting-edge technology with practical design. This component offers superior performance in voltage regulation and power conversion tasks, with exceptional temperature stability. The diode's advanced architecture ensures fast recovery times and minimal switching losses, critical for modern electronic systems. Designers will appreciate its compatibility with automated assembly processes and consistent batch-to-batch performance. Primary applications include consumer electronics, medical devices, and power distribution systems. The CLS10F40,L3F is particularly effective in battery-powered devices where energy efficiency is paramount. Its rugged design meets stringent quality standards for reliability in demanding environments. For engineers seeking a dependable rectification solution, the CLS10F40,L3F delivers outstanding results. Request a quote now to incorporate this high-quality diode into your next project.
General specs
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 40 V
- Capacitance @ Vr, F: 130pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: CL2E
- Operating Temperature - Junction: 150°C