BAS516,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
$0.19
Available to order
Reference Price (USD)
8,000+
$0.02760
Exquisite packaging
Discount
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BAS516,L3F
$0.19
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 ns
- Current - Reverse Leakage @ Vr: 200 nA @ 80 V
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 150°C (Max)
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