3SK293(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
FET RF 12.5V 800MHZ USQ
$0.48
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3SK293(TE85L,F)
$0.48
Product details
Optimize your RF applications with the 3SK293(TE85L,F) RF MOSFET transistor from Toshiba Semiconductor and Storage, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The 3SK293(TE85L,F) handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The 3SK293(TE85L,F) is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The 3SK293(TE85L,F) ensures consistent operation across various frequencies. Toshiba Semiconductor and Storage has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the 3SK293(TE85L,F) is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the 3SK293(TE85L,F) from Toshiba Semiconductor and Storage for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 22dB
- Voltage - Test: 6 V
- Current Rating (Amps): 30mA
- Noise Figure: 2.5dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 12.5 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
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