2SK879-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 0.1W USM
$0.44
Available to order
Reference Price (USD)
3,000+
$0.14105
6,000+
$0.13195
15,000+
$0.12740
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2SK879-Y(TE85L,F)
$0.44
Product details
The 2SK879-Y(TE85L,F) from Toshiba Semiconductor and Storage is a versatile JFET transistor belonging to the Discrete Semiconductor Products family. It is engineered for high-speed switching and amplification, catering to modern electronic demands. With its low gate leakage and high breakdown voltage, this transistor ensures safe and efficient operation in various circuits. Its design prioritizes energy efficiency, making it a sustainable choice for eco-conscious projects. The 2SK879-Y(TE85L,F) is widely used in power management systems, LED drivers, and motor control circuits. It also plays a crucial role in renewable energy applications, such as solar inverters and wind turbines. The industrial automation sector benefits from its reliability in controlling heavy machinery. For seamless integration into your systems, consult our team for technical details and bulk purchase options.
General specs
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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