2SK879-GR(TE85L,F)
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
JFET N-CH 0.1W USM
$0.44
Available to order
Reference Price (USD)
3,000+
$0.14105
6,000+
$0.13195
15,000+
$0.12740
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Product details
The 2SK879-GR(TE85L,F) from Toshiba Semiconductor and Storage is a high-efficiency JFET transistor within the Discrete Semiconductor Products range. It is optimized for low-power applications, delivering consistent performance with minimal energy consumption. Its standout features include high input impedance and low noise, making it perfect for sensitive electronic circuits. The 2SK879-GR(TE85L,F) is widely used in audio amplifiers, ensuring crystal-clear sound reproduction. It also finds applications in sensor interfaces and data acquisition systems, where signal fidelity is crucial. Industries such as automotive, telecommunications, and industrial automation benefit from its reliability. For those seeking a cost-effective yet high-quality JFET transistor, the 2SK879-GR(TE85L,F) is an excellent choice. Submit your inquiry now to receive personalized assistance and pricing information.
General specs
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM