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2SC5200N(S1,E,S)

Toshiba Semiconductor and Storage
2SC5200N(S1,E,S) Preview
Toshiba Semiconductor and Storage
TRANS NPN 230V 15A TO3P
$2.27
Available to order
Reference Price (USD)
1+
$2.37000
10+
$2.13700
25+
$1.90840
100+
$1.71750
250+
$1.52672
500+
$1.33586
1,000+
$1.10686
2,500+
$1.03052
5,000+
$1.01780
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2SC5200N(S1,E,S)

2SC5200N(S1,E,S)

$2.27

Product details

Discover the 2SC5200N(S1,E,S), a high-efficiency Bipolar Junction Transistor from Toshiba Semiconductor and Storage designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The 2SC5200N(S1,E,S) demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the 2SC5200N(S1,E,S) simplifies circuit design challenges. Toshiba Semiconductor and Storage's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15 A
  • Voltage - Collector Emitter Breakdown (Max): 230 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150 W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)

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