2SC5200-O(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 230V 15A TO3P
$2.32
Available to order
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$2.29185
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$2.2687
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$2.24555
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$2.2224
2500+
$2.19925
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2SC5200-O(Q)
$2.32
Product details
The 2SC5200-O(Q) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) designed for reliable amplification and switching applications. As part of the Discrete Semiconductor Products category, this single BJT transistor delivers exceptional efficiency and durability. Its robust construction ensures stable operation under varying electrical conditions, making it a versatile choice for engineers and designers. Whether you're working on low-power circuits or high-frequency applications, the 2SC5200-O(Q) offers consistent performance with minimal distortion. The transistor's compact design allows for easy integration into various circuit layouts, saving valuable board space. With its excellent thermal stability and low noise characteristics, this BJT is ideal for precision electronic systems. Upgrade your projects with the 2SC5200-O(Q) and experience superior signal processing capabilities. For pricing and availability, submit an inquiry today to explore how this transistor can enhance your designs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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