2SC4213BTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 20V 0.3A USM
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07560
15,000+
$0.06720
30,000+
$0.06300
75,000+
$0.05600
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2SC4213BTE85LF
$0.46
Product details
Enhance your electronic designs with the 2SC4213BTE85LF, a premium Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The 2SC4213BTE85LF features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The 2SC4213BTE85LF is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 100 mW
- Frequency - Transition: 30MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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