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2SC3325-Y,LF

Toshiba Semiconductor and Storage
2SC3325-Y,LF Preview
Toshiba Semiconductor and Storage
TRANS NPN 50V 0.5A SMINI
$0.33
Available to order
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3,000+
$0.05796
6,000+
$0.05040
15,000+
$0.04284
30,000+
$0.04032
75,000+
$0.03780
150,000+
$0.03360
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Toshiba Semiconductor and Storage 2SC3325-Y,LF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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2SC3325-Y,LF

2SC3325-Y,LF

$0.33

Product details

Discover the 2SC3325-Y,LF, a high-efficiency Bipolar Junction Transistor from Toshiba Semiconductor and Storage designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The 2SC3325-Y,LF demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the 2SC3325-Y,LF simplifies circuit design challenges. Toshiba Semiconductor and Storage's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini

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