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2SC3303-Y(T6L1,NQ)

Toshiba Semiconductor and Storage
2SC3303-Y(T6L1,NQ) Preview
Toshiba Semiconductor and Storage
TRANS NPN 80V 5A PW-MOLD
$0.60
Available to order
Reference Price (USD)
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$0.58506
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$0.57909
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$0.57312
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$0.56715
Exquisite packaging
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Toshiba Semiconductor and Storage 2SC3303-Y(T6L1,NQ) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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2SC3303-Y(T6L1,NQ)

2SC3303-Y(T6L1,NQ)

$0.60

Product details

The 2SC3303-Y(T6L1,NQ) by Toshiba Semiconductor and Storage sets new standards in single Bipolar Junction Transistor performance within the Discrete Semiconductor Products category. This BJT features enhanced carrier mobility for improved switching speeds and reduced transition losses. Its optimized doping profile minimizes unwanted capacitance effects in high-frequency operation. The transistor maintains stable characteristics under varying load conditions, ensuring dependable circuit behavior. Designers appreciate its wide safe operating area for robust performance in demanding applications. The 2SC3303-Y(T6L1,NQ) commonly appears in power conversion systems, analog computation circuits, and signal amplification stages. Renewable energy inverters, robotics controllers, and wireless charging systems frequently incorporate this component. Military-grade reliability and automotive qualification options are available for critical applications. Toshiba Semiconductor and Storage's commitment to innovation is evident in the 2SC3303-Y(T6L1,NQ)'s advanced architecture and manufacturing precision. The transistor ships in industry-standard packaging compatible with automated placement equipment. Explore the technical advantages of this BJT by requesting samples or a personalized quote through our online procurement platform.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PW-MOLD

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