2SA1873-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A USV
$0.36
Available to order
Reference Price (USD)
3,000+
$0.06720
6,000+
$0.06048
15,000+
$0.05376
30,000+
$0.05040
75,000+
$0.04480
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2SA1873-Y(TE85L,F)
$0.36
Product details
The 2SA1873-Y(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision electronic applications. This product is part of the Discrete Semiconductor Products category, specifically optimized for circuits requiring multiple transistors in a compact package. Ideal for both industrial and commercial use, it ensures reliable performance and enhanced efficiency. The 2SA1873-Y(TE85L,F) features excellent thermal stability and low noise operation, making it suitable for sensitive electronic environments. Its robust construction guarantees durability even in demanding conditions. With its advanced design, this BJT Array offers seamless integration into various circuit designs. Whether you're designing amplifiers, switches, or signal processors, the 2SA1873-Y(TE85L,F) delivers consistent results. Its versatility extends to both analog and digital applications, providing flexibility for engineers. The product's compact form factor saves valuable board space without compromising performance. Trust Toshiba Semiconductor and Storage's expertise in semiconductor technology for your next project. Applications include audio amplification systems, power management modules, and sensor interfaces. For automotive electronics, it ensures reliable operation under varying temperatures. In consumer electronics, it enhances device performance and longevity. Industrial automation systems benefit from its high-speed switching capabilities. To get started with the 2SA1873-Y(TE85L,F), submit an online inquiry today for pricing and availability.
General specs
- Product Status: Active
- Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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