1SV285TPH3F
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
DIODE VARACTOR 10V ESC
$0.09
Available to order
Reference Price (USD)
4,000+
$0.08100
Exquisite packaging
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Product details
Introducing Toshiba Semiconductor and Storage's 1SV285TPH3F - a game-changing varactor diode solution in the Discrete Semiconductor Products market. This variable capacitance diode combines cutting-edge semiconductor technology with practical design features for engineers. Its precisely controlled doping profile creates an ideal balance between tuning range and linearity.
The diode excels in parameters that matter most: low loss, high stability, and repeatable performance. Special manufacturing techniques ensure minimal parameter variation from unit to unit. The component's lead-free construction meets global environmental standards without compromising performance.
Real-world implementations:
1) Dynamic impedance matching in RFID systems
2) Tunable delay lines in radar systems
3) Frequency-agile sensors in industrial IoT
Ready to incorporate 1SV285TPH3F into your designs? Our customer service team awaits your online inquiry with prompt responses regarding technical specifications, sample availability, and volume pricing structures.
General specs
- Product Status: Not For New Designs
- Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
- Capacitance Ratio: 2.3
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC