1SS427,L3M
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SOD923
$0.29
Available to order
Reference Price (USD)
10,000+
$0.03400
30,000+
$0.03200
50,000+
$0.03000
100,000+
$0.02800
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1SS427,L3M
$0.29
Product details
Toshiba Semiconductor and Storage's 1SS427,L3M single rectifier diode delivers exceptional performance in a compact, reliable package. This component is designed for efficient power rectification with minimal energy loss, featuring advanced semiconductor materials for optimal thermal management. The diode exhibits excellent forward conduction characteristics and reliable reverse blocking capability, making it suitable for diverse electronic systems. Its fast recovery time ensures efficient operation in high-frequency switching applications. Primary uses include telecommunications infrastructure, server power supplies, and medical imaging equipment. The 1SS427,L3M also performs well in harsh environment applications such as downhole drilling instrumentation. Key features include superior surge current tolerance and stable operation across temperature variations. Engineers will appreciate its consistent performance in precision power conversion tasks. For technical specifications and purchasing options, contact our expert team to discuss your application requirements.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.6 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
- Operating Temperature - Junction: -55°C ~ 150°C
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