1SS413CT,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 50MA SOD882
$0.32
Available to order
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10,000+
$0.03740
30,000+
$0.03520
50,000+
$0.03300
100,000+
$0.03080
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1SS413CT,L3F
$0.32
Product details
Experience superior rectification performance with the 1SS413CT,L3F single diode from Toshiba Semiconductor and Storage, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The 1SS413CT,L3F performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the 1SS413CT,L3F delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 50mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 nA @ 20 V
- Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: SOD-882
- Operating Temperature - Junction: -55°C ~ 125°C
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