1SS307E,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC79
$0.21
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$0.02600
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$0.02340
56,000+
$0.02080
200,000+
$0.01820
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1SS307E,L3F
$0.21
Product details
Discover the versatility of Toshiba Semiconductor and Storage's 1SS307E,L3F single rectifier diode, engineered for precision power control in modern electronics. This component delivers efficient AC to DC conversion with minimal energy loss, thanks to its advanced semiconductor technology. The diode features excellent forward bias characteristics and reliable reverse voltage protection, ensuring stable operation in diverse circuit configurations. Its compact package design facilitates easy PCB integration while maintaining superior thermal properties. Common applications include solar power systems, uninterruptible power supplies, and audio amplification equipment. The 1SS307E,L3F performs exceptionally well in high-temperature environments, making it suitable for automotive under-hood applications. Other notable features include fast response times and consistent performance under varying load conditions. Electrical engineers will appreciate its reliability in critical power management tasks. To explore how this diode can enhance your designs, request product specifications and pricing information today.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 nA @ 80 V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SC-79
- Operating Temperature - Junction: 150°C (Max)
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