1SS196(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC59-3
$0.35
Available to order
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3,000+
$0.05520
6,000+
$0.04800
15,000+
$0.04080
30,000+
$0.03840
75,000+
$0.03600
150,000+
$0.03360
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1SS196(TE85L,F)
$0.35
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 80 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
- Operating Temperature - Junction: 125°C (Max)
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