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TH58NYG2S3HBAI6

Kioxia America, Inc.
TH58NYG2S3HBAI6 Preview
Kioxia America, Inc.
IC FLASH 4GBIT PARALLEL 63BGA
$6.36
Available to order
Reference Price (USD)
1+
$6.36000
500+
$6.2964
1000+
$6.2328
1500+
$6.1692
2000+
$6.1056
2500+
$6.042
Exquisite packaging
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EMS 3-7 days

Kioxia America, Inc. TH58NYG2S3HBAI6 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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TH58NYG2S3HBAI6

TH58NYG2S3HBAI6

$6.36

Product details

The TH58NYG2S3HBAI6 from Kioxia America, Inc. is a high-performance memory IC designed for demanding applications. This versatile memory solution offers reliable data storage and fast access times, making it ideal for a wide range of electronic systems. With its advanced architecture, the TH58NYG2S3HBAI6 ensures efficient operation in both industrial and commercial environments. Key features include low power consumption, robust data retention, and seamless integration with various host systems. The memory IC supports multiple read/write operations without compromising performance, ensuring smooth operation in data-intensive scenarios. Its compact design allows for easy implementation in space-constrained applications while maintaining high reliability. Applications span across industries, including automotive electronics for infotainment systems, industrial automation for data logging, and consumer electronics for smart devices. The TH58NYG2S3HBAI6 is also suitable for medical equipment requiring secure data storage and telecommunications infrastructure needing high-speed memory solutions. For pricing and availability of this Kioxia America, Inc. memory IC, please submit your inquiry through our online platform. Our team will provide you with competitive quotes and technical support to meet your project requirements.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-BGA
  • Supplier Device Package: 63-BGA (9x11)

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