TC58BYG2S0HBAI4
Kioxia America, Inc.

Kioxia America, Inc.
IC FLASH 4G PARALLEL 63TFBGA
$5.82
Available to order
Reference Price (USD)
1+
$4.69000
10+
$4.25700
25+
$4.16480
50+
$4.14180
210+
$3.71448
420+
$3.70062
630+
$3.56433
1,050+
$3.38877
Exquisite packaging
Discount
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DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Kioxia America, Inc. TC58BYG2S0HBAI4 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Optimize your system's memory performance with the TC58BYG2S0HBAI4 from Kioxia America, Inc., a versatile IC solution for diverse storage requirements. This memory product offers an ideal combination of speed, density, and power efficiency, suitable for both volatile and non-volatile applications. Its flexible architecture supports various system configurations.
The TC58BYG2S0HBAI4 features include burst mode operation, low-latency access, and configurable I/O options. These capabilities enable efficient data handling in performance-sensitive applications. The memory IC demonstrates excellent thermal characteristics, ensuring reliable operation in high-temperature environments. Its design incorporates noise reduction techniques for signal integrity.
Application areas include server memory modules, graphics processing units, and network switches. The TC58BYG2S0HBAI4 is equally effective in digital cameras, gaming consoles, and audio processing equipment. Industrial applications include CNC machinery, test and measurement systems, and building automation controllers requiring dependable memory solutions.
Request detailed information about this Kioxia America, Inc. memory IC by submitting an online inquiry. Our team provides comprehensive support from technical consultation to volume procurement of the TC58BYG2S0HBAI4, ensuring optimal memory solutions for your specific needs.
General specs
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-TFBGA (9x11)