CSD25202W15
Texas Instruments
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Texas Instruments
MOSFET P-CH 20V 4A 9DSBGA
$0.27
Available to order
Reference Price (USD)
1+
$0.26880
500+
$0.266112
1000+
$0.263424
1500+
$0.260736
2000+
$0.258048
2500+
$0.25536
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 9-DSBGA
- Package / Case: 9-UFBGA, DSBGA