CSD19538Q2T
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 13.1A 6WSON
$1.36
Available to order
Reference Price (USD)
250+
$0.46532
500+
$0.39600
750+
$0.34651
1,250+
$0.31680
Exquisite packaging
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CSD19538Q2T
$1.36
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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