CSD19532Q5BT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
$2.94
Available to order
Reference Price (USD)
250+
$1.72400
500+
$1.50850
750+
$1.36196
1,250+
$1.24990
Exquisite packaging
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CSD19532Q5BT
$2.94
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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