CSD19532KTTT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
$2.99
Available to order
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$2.99000
500+
$2.9601
1000+
$2.9302
1500+
$2.9003
2000+
$2.8704
2500+
$2.8405
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CSD19532KTTT
$2.99
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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