CSD13302WT
Texas Instruments
Texas Instruments
MOSFET N-CH 12V 1.6A 4DSBGA
$1.02
Available to order
Reference Price (USD)
2,750+
$0.14570
Exquisite packaging
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CSD13302WT
$1.02
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DSBGA (1x1)
- Package / Case: 4-UFBGA, DSBGA
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