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CSD13302W

Texas Instruments
CSD13302W Preview
Texas Instruments
MOSFET N-CH 12V 1.6A 4DSBGA
$0.52
Available to order
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CSD13302W

CSD13302W

$0.52

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DSBGA (1x1)
  • Package / Case: 4-UFBGA, DSBGA

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