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UG06BHA0G

Taiwan Semiconductor Corporation
UG06BHA0G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
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Reference Price (USD)
12,000+
$0.10875
Exquisite packaging
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UG06BHA0G

UG06BHA0G

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Product details

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

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