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TSM900N06CP ROG

Taiwan Semiconductor Corporation
TSM900N06CP ROG Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 11A TO252
$0.59
Available to order
Reference Price (USD)
2,500+
$0.17546
5,000+
$0.16414
12,500+
$0.15848
Exquisite packaging
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TSM900N06CP ROG

TSM900N06CP ROG

$0.59

Product details

Enhance your electronic designs with the TSM900N06CP ROG single MOSFET transistor from Taiwan Semiconductor Corporation, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The TSM900N06CP ROG features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the TSM900N06CP ROG particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the TSM900N06CP ROG represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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