TSM650P02CX RFG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 4.1A SOT23
$0.74
Available to order
Reference Price (USD)
3,000+
$0.09648
6,000+
$0.09112
15,000+
$0.08308
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$0.07772
75,000+
$0.07504
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TSM650P02CX RFG
$0.74
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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