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TSM60NB1R4CH C5G

Taiwan Semiconductor Corporation
TSM60NB1R4CH C5G Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 3A TO251
$2.46
Available to order
Reference Price (USD)
1+
$0.90000
10+
$0.79400
100+
$0.62770
500+
$0.48678
1,875+
$0.38430
3,750+
$0.35868
Exquisite packaging
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Taiwan Semiconductor Corporation TSM60NB1R4CH C5G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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TSM60NB1R4CH C5G

TSM60NB1R4CH C5G

$2.46

Product details

Taiwan Semiconductor Corporation presents the TSM60NB1R4CH C5G, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The TSM60NB1R4CH C5G offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The TSM60NB1R4CH C5G also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.12 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 257.3 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 28.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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