TSM2537CQ RFG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
$1.50
Available to order
Reference Price (USD)
3,000+
$0.15035
6,000+
$0.14065
15,000+
$0.13580
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Product details
General specs
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
- Power - Max: 6.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-TDFN (2x2)