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TSM019NH04LCR RLG

Taiwan Semiconductor Corporation
TSM019NH04LCR RLG Preview
Taiwan Semiconductor Corporation
40V, 100A, SINGLE N-CHANNEL POWE
$6.60
Available to order
Reference Price (USD)
1+
$6.60000
500+
$6.534
1000+
$6.468
1500+
$6.402
2000+
$6.336
2500+
$6.27
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TSM019NH04LCR RLG

TSM019NH04LCR RLG

$6.60

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFNU (5x6)
  • Package / Case: 8-PowerTDFN

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