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TQM150NB04DCR RLG

Taiwan Semiconductor Corporation
TQM150NB04DCR RLG Preview
Taiwan Semiconductor Corporation
AUTOMOTIVE 40V MOSFET, 15M, DUAL
$3.34
Available to order
Reference Price (USD)
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$3.3066
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$3.2732
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$3.2398
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$3.2064
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$3.173
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TQM150NB04DCR RLG

TQM150NB04DCR RLG

$3.34

Product details

The TQM150NB04DCR RLG from Taiwan Semiconductor Corporation is a high-performance MOSFET array designed for efficient power management in compact electronic systems. This product is part of the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays, offering reliable switching capabilities and low power dissipation. Ideal for applications requiring multiple FETs in a single package, the TQM150NB04DCR RLG ensures enhanced circuit density and simplified design.\n\nKey features of the TQM150NB04DCR RLG include optimized gate charge for fast switching, low on-resistance for reduced conduction losses, and excellent thermal performance. The array configuration allows for seamless integration into designs needing multiple transistors, saving board space and improving overall system efficiency. With robust construction and high reliability, this MOSFET array is suitable for demanding environments.\n\nThe TQM150NB04DCR RLG is widely used in power supplies, motor control systems, and audio amplifiers. In power supplies, it enables efficient voltage regulation and energy conversion. For motor control, it provides precise switching for smooth operation. Audio amplifiers benefit from its low distortion and high fidelity performance.\n\nReady to integrate the TQM150NB04DCR RLG into your next project? Submit an inquiry today to get pricing and availability details. Our team is here to assist with your procurement needs.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
  • Power - Max: 2.4W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)

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