TQM110NB04DCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 50A, DUAL N-CHANNEL POWER M
$3.88
Available to order
Reference Price (USD)
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$3.88000
500+
$3.8412
1000+
$3.8024
1500+
$3.7636
2000+
$3.7248
2500+
$3.686
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TQM110NB04DCR RLG
$3.88
Product details
Introducing the TQM110NB04DCR RLG from Taiwan Semiconductor Corporation, a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe TQM110NB04DCR RLG offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the TQM110NB04DCR RLG into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1354pF @ 20V
- Power - Max: 2.5W (Ta), 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFNU (5x6)
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