TPUH6D S1G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A TO277A
$1.12
Available to order
Reference Price (USD)
1,500+
$0.23171
3,000+
$0.21127
7,500+
$0.19763
10,500+
$0.19082
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TPUH6D S1G
$1.12
Product details
Taiwan Semiconductor Corporation's TPUH6D S1G represents the next generation of single rectifier diodes, combining cutting-edge technology with practical design. This component offers superior performance in voltage regulation and power conversion tasks, with exceptional temperature stability. The diode's advanced architecture ensures fast recovery times and minimal switching losses, critical for modern electronic systems. Designers will appreciate its compatibility with automated assembly processes and consistent batch-to-batch performance. Primary applications include consumer electronics, medical devices, and power distribution systems. The TPUH6D S1G is particularly effective in battery-powered devices where energy efficiency is paramount. Its rugged design meets stringent quality standards for reliability in demanding environments. For engineers seeking a dependable rectification solution, the TPUH6D S1G delivers outstanding results. Request a quote now to incorporate this high-quality diode into your next project.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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