TPAR3J S1G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE AVALANCHE 600V 3A TO277A
$0.99
Available to order
Reference Price (USD)
1,500+
$0.24208
3,000+
$0.21939
7,500+
$0.21182
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TPAR3J S1G
$0.99
Product details
General specs
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 58pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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