TPAR3J S1G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE AVALANCHE 600V 3A TO277A
$0.99
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1,500+
$0.24208
3,000+
$0.21939
7,500+
$0.21182
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TPAR3J S1G
$0.99
Product details
The TPAR3J S1G single rectifier diode from Taiwan Semiconductor Corporation sets new standards for power handling and efficiency in discrete semiconductor components. This diode features an optimized balance between forward conduction characteristics and reverse blocking capability, making it ideal for various rectification applications. Its construction incorporates advanced materials for enhanced thermal performance and long service life. The TPAR3J S1G is particularly suited for power supply units, voltage multipliers, and protection circuits. Industrial applications benefit from its ability to operate reliably under fluctuating load conditions. Additional advantages include excellent surge current handling and stable performance across temperature variations. This diode finds extensive use in aerospace systems, marine electronics, and heavy machinery controls. With its combination of performance and reliability, the TPAR3J S1G is an excellent choice for critical electronic systems. Contact us today to learn more about this exceptional rectifier solution.
General specs
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 58pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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