S1JM RSG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A MICRO SMA
$0.45
Available to order
Reference Price (USD)
3,000+
$0.08840
6,000+
$0.07956
15,000+
$0.07072
30,000+
$0.06630
75,000+
$0.06188
Exquisite packaging
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S1JM RSG
$0.45
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 780 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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