S1JL MHG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Taiwan Semiconductor Corporation S1JL MHG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
S1JL MHG
$0.00
Product details
Enhance your circuit designs with the S1JL MHG single rectifier diode by Taiwan Semiconductor Corporation, engineered for precision and durability. This diode excels in converting AC to DC with minimal power loss, ensuring energy-efficient operation across a wide range of conditions. The S1JL MHG features optimized junction design for improved heat dissipation and long-term reliability. Its excellent rectification efficiency makes it suitable for high-frequency applications. Typical uses include switch-mode power supplies, LED drivers, and motor control circuits. The diode's robust construction withstands harsh environmental conditions, making it ideal for automotive and industrial applications. Additional benefits include low forward voltage drop and high reverse voltage capability. Explore how the S1JL MHG can improve your power management solutions by contacting our sales team for more information.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
Viewed products
